2SC509G

SKU: 2SC509G

2SC509G Transistor Silicon NPN CASE: SOT33 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT33
Manufacturer	Toshiba
Vbr CBO	35
Vbr CEO	30
Max. PD (W)	600m
C(ob) (F)	11p
Derate (Amb) (W/°C)	4.8m
hfe	70
Ic Max. (A)	800m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Trans. Freq (Hz) Min.	100M
@VCE (test) (V)	2.0
Oper. Temp (°C) Max.	150
@Ic (A)	50m
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.6 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	30 pF
Transition Frequency (ft):	50 MHz
Forward Current Transfer Ratio (hFE), MIN	200
SKU	763209

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