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2SC511O
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2SC511O

SKU: 2SC511O
2SC511O Transistor Silicon NPN CASE: SOT33 MAKE: Toshiba
Product specifications
Equivalent 2SC511
Type Transistor Silicon NPN
Case SOT33
Manufacturer Toshiba
Vbr CBO 120
Vbr CEO 80
Max. PD (W) 800m
C(ob) (F) 25p
Derate (Amb) (W/°C) 5.3m
hfe 50
Ic Max. (A) 1.5
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Trans. Freq (Hz) Min. 60M
@VCE (test) (V) 2.0
Oper. Temp (°C) Max. 175
@Ic (A) 200m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 40 pF
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 763170
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