| 2SC5361 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | TO262 | |
| Manufacturer | Toshiba | |
| Polarity | NPN | |
| Maximum Collector Power Dissipation (Pc) | 40 W | |
| Maximum Collector-Base Voltage |Vcb| | 900 V | |
| Maximum Collector-Emitter Voltage |Vce| | 800 V | |
| Maximum Emitter-Base Voltage |Veb| | 7 V | |
| Maximum Collector Current |Ic max| | 3 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 15 | |
| SKU | 345077 | |