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2SC538A
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2SC538A

SKU: 2SC538A
2SC538A Transistor Silicon NPN CASE: TO18 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon NPN
Case TO18
Manufacturer Matsushita Electronics
Vbr CBO 45
Vbr CEO 45
Max. PD (W) 300m
Derate (Amb) (W/°C) 2.0m
hfe 250
Ic Max. (A) 50m
Icbo Max. @Vcb Max. (A) .01u
Polarity NPN
@VCE (test) (V) 5.0i
Oper. Temp (°C) Max. 175
@Ic (A) 2.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN 250
SKU 395390
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