2SC555

SKU: 2SC555

2SC555 Transistor Silicon NPN CASE: TO39 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Equivalent	2SC555D
Type	Transistor Silicon NPN
Case	TO39
Manufacturer	Toshiba
Vbr CBO	55
Vbr CEO	30
Max. PD (W)	4.0
Min hFE	10
Ic Max. (A)	400m
@Ic (test) (A)	50m
Icbo Max. @Vcb Max. (A)	20u
Polarity	NPN
R(sat) (Û)	10
Derate Above 25°C	27m
Trans. Freq (Hz) Min.	800M
Oper. Temp (°C) Max.	175
@VCE (V)	3.0
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	4 W
Maximum Collector-Base Voltage \|Vcb\|	55 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	3 V
Maximum Collector Current \|Ic max\|	0.4 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	400 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	395395

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