2SC556

SKU: 2SC556

2SC556 Transistor Silicon NPN CASE: TO39 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO39
Manufacturer	Toshiba
Vbr CBO	40
Vbr CEO	20
Max. PD (W)	750m
C(ob) (F)	3.8p
Derate (Amb) (W/°C)	6.3m
hfe	45
Ic Max. (A)	400m
Icbo Max. @Vcb Max. (A)	25u
Polarity	NPN
Trans. Freq (Hz) Min.	850M
@VCE (test) (V)	15
Oper. Temp (°C) Max.	150
@Ic (A)	50m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.75 W
Maximum Collector-Base Voltage \|Vcb\|	40 V
Maximum Collector-Emitter Voltage \|Vce\|	25 V
Maximum Emitter-Base Voltage \|Veb\|	2 V
Maximum Collector Current \|Ic max\|	0.4 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	425 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SMD Transistor Code	FD
SKU	584709

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