| 2SC5570 Datasheet |
| Type | Transistor Silicon NPN | |
| Case | TO3PN | |
| Manufacturer | Toshiba | |
| Polarity | NPN | |
| Maximum Collector Power Dissipation (Pc) | 220 W | |
| Maximum Collector-Base Voltage |Vcb| | 1700 V | |
| Maximum Collector-Emitter Voltage |Vce| | 800 V | |
| Maximum Emitter-Base Voltage |Veb| | 5 V | |
| Maximum Collector Current |Ic max| | 28 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Collector Capacitance (Cc) | 470 pF | |
| Transition Frequency (ft): | 2 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 4.5 | |
| SKU | 20769 | |