2SC5570 Datasheet |
Type | Transistor Silicon NPN | |
Manufacturer | Toshiba | |
Case | TO3PN | |
Polarity | NPN | |
Maximum Collector Power Dissipation (Pc) | 220 W | |
Maximum Collector-Base Voltage |Vcb| | 1700 V | |
Maximum Collector-Emitter Voltage |Vce| | 800 V | |
Maximum Emitter-Base Voltage |Veb| | 5 V | |
Maximum Collector Current |Ic max| | 28 A | |
Max. Operating Junction Temperature (Tj) | 150 °C | |
Collector Capacitance (Cc) | 470 pF | |
Transition Frequency (ft): | 2 MHz | |
Forward Current Transfer Ratio (hFE), MIN | 4.5 | |
SKU | 20769 |