The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC559
View detailed images (12)

2SC559

SKU: 2SC559
2SC559 Transistor Silicon NPN CASE: TO5 MAKE: Toshiba
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer Toshiba
Vbr CBO 60
Vbr CEO 30
Max. PD (W) 600m
C(ob) (F) 3.2p
hfe 80
Ic Max. (A) 300n
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Trans. Freq (Hz) Min. 230M
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 175
@Ic (A) 100m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 6 pF
Transition Frequency (ft): 115 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 584711
Back