2SC5590
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2SC5590

SKU: 2SC5590
2SC5590 Transistor Silicon NPN CASE: SOT430 MAKE: Toshiba
Datasheet
2SC5590 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT430
Manufacturer Toshiba
Polarity NPN
Maximum Collector Power Dissipation (Pc) 200 W
Maximum Collector-Base Voltage |Vcb| 1700 V
Maximum Collector-Emitter Voltage |Vce| 800 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 16 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 240 pF
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN 4.8
SKU 345194
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