2SC5597
View detailed images (4)

2SC5597

SKU: 2SC5597
2SC5597 Transistor Silicon NPN CASE: SOT430 MAKE: Matsushita Electronics
Datasheet
2SC5597 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT430
Manufacturer Matsushita Electronics
Polarity NPN
Maximum Collector Power Dissipation (Pc) 200 W
Maximum Collector-Base Voltage |Vcb| 1700 V
Maximum Collector-Emitter Voltage |Vce| 600 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 22 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN 6
SMD Transistor Code C5597
SKU 345199
Back