| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO72 |
| Manufacturer |
Matsushita Electronics |
| Vbr CBO |
40 |
| Vbr CEO |
25 |
| Max. PD (W) |
145m |
| Derate (Amb) (W/°C) |
1.2m |
| hfe |
.38 |
| Ic Max. (A) |
25m |
| Polarity |
NPN |
| @VCE (test) (V) |
10i |
| Oper. Temp (°C) Max. |
175 |
| @Ic (A) |
7.0m |
| Pinout Equivalence Number |
N/A |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.145 W |
| Maximum Collector-Base Voltage |Vcb| |
40 V |
| Maximum Collector-Emitter Voltage |Vce| |
25 V |
| Maximum Emitter-Base Voltage |Veb| |
4 V |
| Maximum Collector Current |Ic max| |
0.025 A |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Collector Capacitance (Cc) |
0.4 pF |
| Transition Frequency (ft): |
275 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
38 |
| SKU |
345209 |