2SC5810
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2SC5810

SKU: 2SC5810
2SC5810 Transistor Silicon NPN CASE: SOT89 MAKE: Toshiba
Datasheet
2SC5810 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT89
Manufacturer Toshiba
Polarity NPN
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 100 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 5 pF
Forward Current Transfer Ratio (hFE), MIN 400
SMD Transistor Code 3C
SKU 585352
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