The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC5819

2SC5819

SKU: 2SC5819
2SC5819 Transistor Silicon NPN CASE: SOT89 MAKE: Toshiba
Datasheet
2SC5819 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT89
Manufacturer Toshiba
Polarity NPN
Maximum Collector Power Dissipation (Pc) 1 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 20 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 18 pF
Forward Current Transfer Ratio (hFE), MIN 400
SMD Transistor Code 3D
SKU 585353
Back