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2SC582A
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2SC582A

SKU: 2SC582A
2SC582A Transistor Silicon NPN CASE: TO66 MAKE: Matsushita Electronics
Product specifications
Equivalent 2SC582
Type Transistor Silicon NPN
Case TO66
Manufacturer Matsushita Electronics
Vbr CBO 300
Vbr CEO 300
Max. PD (W) 4.0
Max. hFE 150
Min hFE 30
Ic Max. (A) 100m
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 100m
Polarity NPN
Derate Above 25°C 50m
Oper. Temp (°C) Max. 140
@VCE (V) 10i
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 4 W
Maximum Collector-Base Voltage |Vcb| 300 V
Maximum Collector-Emitter Voltage |Vce| 300 V
Maximum Emitter-Base Voltage |Veb| 3 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 30
SKU 550619
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