| Weight |
0.01 kg
|
| Equivalent |
2SC583Z |
| Type |
Transistor Silicon NPN |
| Case |
TO72 |
| Manufacturer |
Matsushita Electronics |
| Vbr CBO |
30 |
| Vbr CEO |
15 |
| Max. PD (W) |
200m |
| C(ob) (F) |
800f |
| hfe |
25 |
| Ic Max. (A) |
25m |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
1.3G |
| @VCE (test) (V) |
1.0 |
| Oper. Temp (°C) Max. |
175 |
| @Ic (A) |
2.0m |
| Pinout Equivalence Number |
4-22 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.2 W |
| Maximum Collector-Base Voltage |Vcb| |
30 V |
| Maximum Emitter-Base Voltage |Veb| |
2 V |
| Maximum Collector Current |Ic max| |
0.02 A |
| Max. Operating Junction Temperature (Tj) |
200 °C |
| Transition Frequency (ft): |
650 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
40 |
| SKU |
762721 |