| Type | Transistor Silicon NPN | |
| Case | TO60 | |
| Manufacturer | Matsushita Electronics | |
| Vbr CBO | 65 | |
| Vbr CEO | 40 | |
| Max. PD (W) | 20 | |
| Min hFE | 30- | |
| Ic Max. (A) | 3.0 | |
| @Ic (test) (A) | 200m | |
| Icbo Max. @Vcb Max. (A) | 12u | |
| Polarity | NPN | |
| R(sat) (Û) | 2.0 | |
| Derate Above 25°C | 133m | |
| Trans. Freq (Hz) Min. | 400M | |
| Oper. Temp (°C) Max. | 175 | |
| @VCE (V) | 28i | |
| Pinout Equivalence Number | 3-12 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 20 W | |
| Maximum Collector-Base Voltage |Vcb| | 65 V | |
| Maximum Collector Current |Ic max| | 3 A | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Transition Frequency (ft): | 175 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 15 | |
| SKU | 549817 | |