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2SC593M
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2SC593M

SKU: 2SC593M
2SC593M Transistor Silicon NPN CASE: TO72 MAKE: Matsushita Electronics
Product specifications
Equivalent 2SC593
Type Transistor Silicon NPN
Case TO72
Manufacturer Matsushita Electronics
Vbr CBO 50
Vbr CEO 30
Max. PD (W) 165m
C(ob) (F) 2.0p
Derate (Amb) (W/°C) 1.0m
hfe 40
Ic Max. (A) 30m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 175
@Ic (A) 1.0m
Pinout Equivalence Number 4-20
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.165 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.03 A
Max. Operating Junction Temperature (Tj) 190 °C
Collector Capacitance (Cc) 4 pF
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 550622
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