| Type | Transistor Silicon NPN | |
| Case | DIP3 | |
| Manufacturer | Toshiba | |
| Polarity | NPN | |
| Maximum Collector Power Dissipation (Pc) | 1 W | |
| Maximum Collector-Base Voltage |Vcb| | 800 V | |
| Maximum Collector-Emitter Voltage |Vce| | 410 V | |
| Maximum Emitter-Base Voltage |Veb| | 8 V | |
| Maximum Collector Current |Ic max| | 1 A | |
| Max. Operating Junction Temperature (Tj) | 150 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 60 | |
| SMD Transistor Code | C6040 | |
| SKU | 762611 | |