Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
National Semiconductor - NSC |
Case |
TO3 |
Vbr CBO |
1.1k |
Vbr CEO |
1.1k |
Max. PD (W) |
50 |
Min hFE |
7.0 |
Ic Max. (A) |
2.5 |
@Ic (test) (A) |
2.0 |
Icbo Max. @Vcb Max. (A) |
10u |
Polarity |
NPN |
R(sat) (Û) |
5.5 |
Derate Above 25°C |
400m |
Trans. Freq (Hz) Min. |
2.0M |
Oper. Temp (°C) Max. |
140 |
@VCE (V) |
15 |
Pinout Equivalence Number |
3-14 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
50 W |
Maximum Collector-Base Voltage |Vcb| |
1100 V |
Maximum Collector-Emitter Voltage |Vce| |
700 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
2.5 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Transition Frequency (ft): |
0.8 MHz |
Forward Current Transfer Ratio (hFE), MIN |
8 |
SKU |
80834 |