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2SC648H
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2SC648H

SKU: 2SC648H
2SC648H Transistor Silicon NPN CASE: TO18 MAKE: Hitachi
Product specifications
Equivalent 2SC648
Type Transistor Silicon NPN
Case TO18
Manufacturer Hitachi
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 100m
hfe 160
Ic Max. (A) 30m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
@VCE (test) (V) 6.0
@Ic (A) .10m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.03 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN 160
SKU 543061
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