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2SC649
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2SC649

SKU: 2SC649
2SC649 Transistor Silicon NPN CASE: TO1 MAKE: Hitachi
Product specifications
Type Transistor Silicon NPN
Case TO1
Manufacturer Hitachi
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 200m
C(ob) (F) 2.5p
hfe 60
Ic Max. (A) 30m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Trans. Freq (Hz) Min. 220M
@VCE (test) (V) 6.0
@Ic (A) .10m
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.1 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.03 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 110 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SKU 542493
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