2SC660

SKU: 2SC660

2SC660 Transistor Silicon NPN CASE: TO1 MAKE: Mitsubishi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO1
Manufacturer	Mitsubishi
Vbr CBO	25
Vbr CEO	12
Max. PD (W)	150m
C(ob) (F)	1.0p
Derate (Amb) (W/°C)	1.4m
hfe	60
Ic Max. (A)	20m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Trans. Freq (Hz) Min.	600M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	125
@Ic (A)	3.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.15 W
Maximum Collector-Base Voltage \|Vcb\|	25 V
Maximum Collector-Emitter Voltage \|Vce\|	12 V
Maximum Emitter-Base Voltage \|Veb\|	4 V
Maximum Collector Current \|Ic max\|	0.02 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	300 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	762561

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