2SC681ARD

SKU: 2SC681ARD

2SC681ARD Transistor Silicon NPN CASE: TO3 MAKE: Hitachi

Datasheet

2SC681ARD Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Hitachi
Vbr CEO	80
Max. PD (W)	50
Min hFE	10
Ic Max. (A)	6.0
@Ic (test) (A)	5.0
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Derate Above 25°C	400m
Oper. Temp (°C) Max.	140
@VCE (V)	1.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	50 W
Maximum Collector-Base Voltage \|Vcb\|	200 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	6 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	60
SKU	543629

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