2SC687
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2SC687

SKU: 2SC687
2SC687 Transistor Silicon NPN CASE: TO3 MAKE: Matsushita Electronics
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Matsushita Electronics
Vbr CBO 150
Vbr CEO 150
Max. PD (W) 50
t(f) Max. (S) 1.0u
Max. hFE 33-
Min hFE 14
Ic Max. (A) 5.0
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 15m
Polarity NPN
R(sat) (Û) 320m
Derate Above 25°C 666m
Oper. Temp (°C) Max. 140
@VCE (V) 4.0
Pinout Equivalence Number N/A
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 50 W
Maximum Collector-Base Voltage |Vcb| 150 V
Maximum Collector-Emitter Voltage |Vce| 150 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 5 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 14
SKU 395424
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