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2SC688
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2SC688

SKU: 2SC688
2SC688 Transistor Silicon NPN CASE: TO117 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon NPN
Case TO117
Manufacturer Mitsubishi
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 20
Min hFE 5.0
Ic Max. (A) 1.5
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 500u
Polarity NPN
Derate Above 25°C 114m
Trans. Freq (Hz) Min. 300M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 4-91
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 20 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 150 MHz
Forward Current Transfer Ratio (hFE), MIN 5
SKU 552013
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