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2SC691
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2SC691

SKU: 2SC691
2SC691 Transistor Silicon NPN CASE: TO117 MAKE: Mitsubishi
Product specifications
Equivalent 2SC691M
Type Transistor Silicon NPN
Case TO117
Manufacturer Mitsubishi
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 8.6
Max. hFE 180
Min hFE 10
Ic Max. (A) 500m
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 200u
Polarity NPN
Derate Above 25°C 57m
Trans. Freq (Hz) Min. 400M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 4-28
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 10
SKU 552015
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