2SC767

SKU: 2SC767

2SC767 Transistor - Case: TO3 Make: Mitsubishi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Mitsubishi
Vbr CBO	180
Vbr CEO	120
Max. PD (W)	30
Max. hFE	180
Min hFE	20
Ic Max. (A)	2.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
Derate Above 25°C	240m
Oper. Temp (°C) Max.	140
@VCE (V)	4.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	30 W
Maximum Collector-Base Voltage \|Vcb\|	180 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	14 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	552024

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