2SC779

SKU: 2SC779

2SC779 Transistor Silicon NPN CASE: TO66 MAKE: Toshiba

Product specifications

Weight	0.05 kg
Type	Transistor Silicon NPN
Case	TO66
Manufacturer	Toshiba
Vbr CBO	300
Vbr CEO	250
Max. PD (W)	20
Max. hFE	80-
Min hFE	30
Ic Max. (A)	2.0
@Ic (test) (A)	100m
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Derate Above 25°C	160m
Oper. Temp (°C) Max.	140
@VCE (V)	10
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	20 W
Maximum Collector-Base Voltage \|Vcb\|	300 V
Maximum Collector-Emitter Voltage \|Vce\|	250 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	5 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	395443

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