2SC793R

SKU: 2SC793R

2SC793R Transistor Silicon NPN CASE: TO3 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	Toshiba
Vbr CBO	100
Vbr CEO	80
Max. PD (W)	60
Max. hFE	70
Min hFE	30
Ic Max. (A)	7.0
@Ic (test) (A)	1.0
Icbo Max. @Vcb Max. (A)	1.0m
Polarity	NPN
R(sat) (Û)	460m
Derate Above 25°C	480m
Trans. Freq (Hz) Min.	9.0M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	60 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	7 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	400 pF
Transition Frequency (ft):	5 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	585386

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