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2SC812
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2SC812

SKU: 2SC812
2SC812 Transistor Silicon NPN CASE: TO18 MAKE: Fujitsu
Product specifications
Type Transistor Silicon NPN
Case TO18
Manufacturer Fujitsu
Vbr CBO 20
Vbr CEO 20
Max. PD (W) 250m
Derate (Amb) (W/°C) 2.0m
hfe 50
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 500n
Polarity NPN
@VCE (test) (V) 1.0
Oper. Temp (°C) Max. 150
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.25 W
Maximum Collector-Base Voltage |Vcb| 20 V
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 20
SKU 762478
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