2SC818

SKU: 2SC818

2SC818 Transistor Silicon NPN CASE: TO5 MAKE: Mitsubishi

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO5
Manufacturer	Mitsubishi
Vbr CBO	160
Vbr CEO	120
Max. PD (W)	800m
C(ob) (F)	4.5p
Derate (Amb) (W/°C)	6.7m
hfe	20
Ic Max. (A)	100m
Icbo Max. @Vcb Max. (A)	1.0u
Polarity	NPN
Trans. Freq (Hz) Min.	100M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	150
@Ic (A)	10m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.8 W
Maximum Collector-Base Voltage \|Vcb\|	160 V
Maximum Collector-Emitter Voltage \|Vce\|	120 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	9 pF
Transition Frequency (ft):	50 MHz
Forward Current Transfer Ratio (hFE), MIN	20
SKU	552029

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