| Type | Transistor Silicon NPN | |
| Case | TO5 | |
| Manufacturer | Matsushita Electronics | |
| Polarity | NPN | |
| Maximum Collector Power Dissipation (Pc) | 2.5 W | |
| Maximum Collector-Base Voltage |Vcb| | 40 V | |
| Maximum Collector-Emitter Voltage |Vce| | 20 V | |
| Maximum Emitter-Base Voltage |Veb| | 4 V | |
| Maximum Collector Current |Ic max| | 0.8 A | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Transition Frequency (ft): | 200 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 20 | |
| SKU | 590813 | |