2SC833

SKU: 2SC833

2SC833 Transistor Silicon NPN CASE: TO66 MAKE: Toshiba

Product specifications

Weight	0.05 kg
Type	Transistor Silicon NPN
Case	TO66
Manufacturer	Toshiba
Vbr CBO	450
Vbr CEO	300
Max. PD (W)	25
t(f) Max. (S)	3.0u+
Max. hFE	80
Min hFE	40
Ic Max. (A)	2.0
@Ic (test) (A)	100m
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Tr Max. (s)	2.0u
R(sat) (Û)	1.2
Derate Above 25°C	200m
Oper. Temp (°C) Max.	140
@VCE (V)	10
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|	450 V
Maximum Collector-Emitter Voltage \|Vce\|	300 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	2 A
Max. Operating Junction Temperature (Tj)	175 °C
Transition Frequency (ft):	10 MHz
Forward Current Transfer Ratio (hFE), MIN	40
SKU	762467

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