Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Matsushita Electronics |
Case |
TO3 |
Vbr CBO |
250 |
Vbr CEO |
250 |
Max. PD (W) |
50 |
t(f) Max. (S) |
300n |
Max. hFE |
25- |
Min hFE |
14 |
Ic Max. (A) |
5.0 |
@Ic (test) (A) |
5.0 |
Icbo Max. @Vcb Max. (A) |
15m |
Polarity |
NPN |
R(sat) (Û) |
320m |
Derate Above 25°C |
666m |
Oper. Temp (°C) Max. |
140 |
@VCE (V) |
4.0 |
Pinout Equivalence Number |
3-14 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
50 W |
Maximum Collector-Base Voltage |Vcb| |
250 V |
Maximum Collector-Emitter Voltage |Vce| |
200 V |
Maximum Emitter-Base Voltage |Veb| |
6 V |
Maximum Collector Current |Ic max| |
5 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Transition Frequency (ft): |
25 MHz |
Forward Current Transfer Ratio (hFE), MIN |
14 |
SKU |
368884 |