| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO39 |
| Manufacturer |
Mitsubishi |
| Vbr CBO |
40 |
| Vbr CEO |
40 |
| Max. PD (W) |
860m |
| Derate (Amb) (W/°C) |
28m |
| hfe |
10 |
| Ic Max. (A) |
500m |
| Icbo Max. @Vcb Max. (A) |
50u |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
800M |
| @VCE (test) (V) |
10 |
| Oper. Temp (°C) Max. |
175 |
| @Ic (A) |
100m |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
5 W |
| Maximum Collector-Base Voltage |Vcb| |
40 V |
| Maximum Collector-Emitter Voltage |Vce| |
24 V |
| Maximum Emitter-Base Voltage |Veb| |
4 V |
| Maximum Collector Current |Ic max| |
0.5 A |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Transition Frequency (ft): |
400 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
5 |
| SKU |
552032 |