The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
2SC910
View detailed images (1)

2SC910

SKU: 2SC910
2SC910 Transistor Silicon NPN CASE: TO117 MAKE: Mitsubishi
Product specifications
Type Transistor Silicon NPN
Case TO117
Manufacturer Mitsubishi
Vbr CBO 40
Vbr CEO 40
Max. PD (W) 10
Min hFE 5.0
Ic Max. (A) 1.0
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 100u
Polarity NPN
Derate Above 25°C 57m
Trans. Freq (Hz) Min. 800M
Oper. Temp (°C) Max. 175
@VCE (V) 10
Pinout Equivalence Number 4-91
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 10 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 200 °C
Transition Frequency (ft): 350 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 552034
Back