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2SC912M
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2SC912M

SKU: 2SC912M
2SC912M Transistor Silicon NPN CASE: TO1 MAKE: Mitsubishi
Product specifications
Equivalent 2SC912
Type Transistor Silicon NPN
Case TO1
Manufacturer Mitsubishi
Vbr CBO 30
Vbr CEO 25
Max. PD (W) 150m
C(ob) (F) 2.5p
Derate (Amb) (W/°C) 1.2m
hfe 90
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 6.0
Oper. Temp (°C) Max. 150
@Ic (A) 10m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Base Voltage |Vcb| 30 V
Maximum Collector-Emitter Voltage |Vce| 25 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 5 pF
Transition Frequency (ft): 75 MHz
Forward Current Transfer Ratio (hFE), MIN 90
SKU 762424
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