| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO3 |
| Manufacturer |
Hitachi |
| Vbr CBO |
1.2k |
| Vbr CEO |
500 |
| Max. PD (W) |
22 |
| Ic Max. (A) |
2.5 |
| Polarity |
NPN |
| Tr Max. (s) |
1.2u |
| R(sat) (Û) |
4.0 |
| Derate Above 25°C |
220m |
| Oper. Temp (°C) Max. |
125 |
| Pinout Equivalence Number |
3-14 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
22 W |
| Maximum Collector-Base Voltage |Vcb| |
1200 V |
| Maximum Collector-Emitter Voltage |Vce| |
500 V |
| Maximum Emitter-Base Voltage |Veb| |
6 V |
| Maximum Collector Current |Ic max| |
2.5 A |
| Max. Operating Junction Temperature (Tj) |
150 °C |
| Transition Frequency (ft): |
50 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
4 |
| SKU |
83950 |