| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO18 |
| Manufacturer |
Matsushita Electronics |
| Vbr CBO |
20 |
| Vbr CEO |
15 |
| Max. PD (W) |
300m |
| t(f) Max. (S) |
25n |
| hfe |
45 |
| Ic Max. (A) |
100m |
| Icbo Max. @Vcb Max. (A) |
.10u |
| Polarity |
NPN |
| Tr Max. (s) |
7.0n |
| Trans. Freq (Hz) Min. |
350M |
| @VCE (test) (V) |
.35 |
| Oper. Temp (°C) Max. |
175 |
| @Ic (A) |
10m |
| Pinout Equivalence Number |
N/A |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.3 W |
| Maximum Collector-Base Voltage |Vcb| |
20 V |
| Maximum Collector-Emitter Voltage |Vce| |
15 V |
| Maximum Emitter-Base Voltage |Veb| |
5 V |
| Maximum Collector Current |Ic max| |
0.1 A |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Transition Frequency (ft): |
175 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
45 |
| SKU |
549503 |