Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Toshiba |
Case |
TO39 |
Vbr CBO |
300 |
Vbr CEO |
300 |
Max. PD (W) |
800m |
C(ob) (F) |
5.5p |
hfe |
80 |
Ic Max. (A) |
100m |
Icbo Max. @Vcb Max. (A) |
100n |
Polarity |
NPN |
Trans. Freq (Hz) Min. |
100M |
@VCE (test) (V) |
10 |
Oper. Temp (°C) Max. |
150 |
@Ic (A) |
50m |
Pinout Equivalence Number |
3-12 |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
0.8 W |
Maximum Collector-Base Voltage |Vcb| |
300 V |
Maximum Collector-Emitter Voltage |Vce| |
300 V |
Maximum Emitter-Base Voltage |Veb| |
5 V |
Maximum Collector Current |Ic max| |
0.15 A |
Max. Operating Junction Temperature (Tj) |
150 °C |
Collector Capacitance (Cc) |
5.5 pF |
Transition Frequency (ft): |
40 MHz |
Forward Current Transfer Ratio (hFE), MIN |
25 |
SKU |
80859 |