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2SC999
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2SC999

SKU: 2SC999
2SC999 Transistor Silicon NPN CASE: TO3 MAKE: Toshiba
Product specifications
Equivalent 2SC999A
Type Transistor Silicon NPN
Case TO3
Manufacturer Toshiba
Vbr CBO 1.5k
Vbr CEO 700
Max. PD (W) 50
Max. hFE 120
Min hFE 30
Ic Max. (A) 1.5
@Ic (test) (A) 150m
Icbo Max. @Vcb Max. (A) 10u
Polarity NPN
Derate Above 25°C 2.5
Trans. Freq (Hz) Min. 1.0M
Oper. Temp (°C) Max. 140
@VCE (V) 15
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 40 W
Maximum Collector-Base Voltage |Vcb| 1500 V
Maximum Collector-Emitter Voltage |Vce| 700 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 0.5 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 584724
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