2SD100

SKU: 2SD100

2SD100 Transistor Germanium NPN CASE: TO1 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Germanium NPN
Case	TO1
Manufacturer	Toshiba
Vbr CBO	32
Vbr CEO	32
Max. PD (W)	250m
hfe	75
Ic Max. (A)	400m
Polarity	NPN
@VCE (test) (V)	1.0
@Ic (A)	150m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.25 W
Maximum Collector-Base Voltage \|Vcb\|	32 V
Maximum Collector-Emitter Voltage \|Vce\|	18 V
Maximum Emitter-Base Voltage \|Veb\|	12 V
Maximum Collector Current \|Ic max\|	0.4 A
Max. Operating Junction Temperature (Tj)	125 °C
Forward Current Transfer Ratio (hFE), MIN	40
SKU	762269

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