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2SD1001
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2SD1001

SKU: 2SD1001
2SD1001 Transistor - Case: SP0 Make: NEC
+ VAT 20% for UK purchases
Datasheet
2SD1001 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SP0
Manufacturer NEC
Vbr CBO 80
Vbr CEO 80
Max. PD (W) 2.0
Max. hFE 400
Min hFE 90
Ic Max. (A) 300m
@Ic (test) (A) 50m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Derate Above 25°C .01
Trans. Freq (Hz) Min. 140M
Oper. Temp (°C) Max. 150
@VCE (V) 1.0
Pinout Equivalence Number 3-10
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 2 W
Maximum Collector-Base Voltage |Vcb| 80 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 70 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SMD Transistor Code EK_EL_EM
SKU 345302
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