2SD1006

SKU: 2SD1006

2SD1006 Transistor - Case: SP0 Make: NEC

Datasheet

2SD1006 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SP0
Manufacturer	NEC
Vbr CBO	100
Vbr CEO	100
Max. PD (W)	2.0
Max. hFE	400
Min hFE	90
Ic Max. (A)	0.7
@Ic (test) (A)	100m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
Trans. Freq (Hz) Min.	90M
Oper. Temp (°C) Max.	150
@VCE (V)	1.0
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	2 W
Maximum Collector-Base Voltage \|Vcb\|	100 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.7 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	12 pF
Transition Frequency (ft):	45 MHz
Forward Current Transfer Ratio (hFE), MIN	60
SMD Transistor Code	HK_HL_HM
SKU	345305

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