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2SD1007
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2SD1007

SKU: 2SD1007
2SD1007 Transistor - Case: SP0 Make: NEC
+ VAT 20% for UK purchases
Datasheet
2SD1007 Datasheet
Product specifications
Type Transistor Silicon NPN
Case SP0
Manufacturer NEC
Vbr CBO 120
Vbr CEO 120
Max. PD (W) 2.0
Max. hFE 400
Min hFE 90
Ic Max. (A) 0.7
@Ic (test) (A) 100m
Icbo Max. @Vcb Max. (A) 100n
Polarity NPN
Trans. Freq (Hz) Min. 90M
Oper. Temp (°C) Max. 150
@VCE (V) 1.0
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 2 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.7 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 12 pF
Transition Frequency (ft): 45 MHz
Forward Current Transfer Ratio (hFE), MIN 60
SMD Transistor Code HP_HQ_HR
SKU 345306
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