2SD1009

SKU: 2SD1009

2SD1009 Transistor Silicon NPN CASE: SOT89 MAKE: Matsushita Electronics

Datasheet

2SD1009 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT89
Manufacturer	Matsushita Electronics
Vbr CBO	150
Vbr CEO	150
Max. PD (W)	1.0
Max. hFE	450
Ic Max. (A)	50m
@Ic (test) (A)	10m
Polarity	NPN
Trans. Freq (Hz) Min.	160M
Oper. Temp (°C) Max.	150
@VCE (V)	5.0
Pinout Equivalence Number	3-15
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	1 W
Maximum Collector-Base Voltage \|Vcb\|	150 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	2 pF
Transition Frequency (ft):	80 MHz
Forward Current Transfer Ratio (hFE), MIN	90
SKU	345307

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