2SD101

SKU: 2SD101

2SD101 Transistor Germanium NPN CASE: TO1 MAKE: Toshiba

Product specifications

Weight	0.01 kg
Type	Transistor Germanium NPN
Case	TO1
Manufacturer	Toshiba
Vbr CBO	80
Vbr CEO	80
Max. PD (W)	250m
Derate (Amb) (W/°C)	5.0m
hfe	70
Ic Max. (A)	600m
Icbo Max. @Vcb Max. (A)	50u
Polarity	NPN
@VCE (test) (V)	1.0
Oper. Temp (°C) Max.	75
@Ic (A)	150m
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.25 W
Maximum Collector-Base Voltage \|Vcb\|	80 V
Maximum Collector-Emitter Voltage \|Vce\|	40 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	0.6 A
Max. Operating Junction Temperature (Tj)	125 °C
Forward Current Transfer Ratio (hFE), MIN	30
SKU	762251

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