2SD102

SKU: 2SD102

2SD102 Transistor Silicon NPN CASE: TO66 MAKE: Toshiba

Datasheet

2SD102 Datasheet

Product specifications

Weight	0.05 kg
Type	Transistor Silicon NPN
Case	TO66
Manufacturer	Toshiba
Vbr CBO	100
Vbr CEO	80
Max. PD (W)	25
Max. hFE	300
Min hFE	30
Ic Max. (A)	3.0
@Ic (test) (A)	500m
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Derate Above 25°C	200m
Trans. Freq (Hz) Min.	1.5M
Oper. Temp (°C) Max.	140
@VCE (V)	5.0
Pinout Equivalence Number	3-14
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	25 W
Maximum Collector-Base Voltage \|Vcb\|	110 V
Maximum Collector-Emitter Voltage \|Vce\|	80 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	3 A
Max. Operating Junction Temperature (Tj)	125 °C
Transition Frequency (ft):	0.8 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	345310

Back