2SD1030

SKU: 2SD1030

2SD1030 Transistor Silicon NPN CASE: SOT23 MAKE: Matsushita Electronics

Price:

£4.79 Inc. VAT (£3.99 Ex. VAT)

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Datasheet

2SD1030 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT23
Manufacturer	Matsushita Electronics
Vbr CBO	50
Vbr CEO	40
Max. PD (W)	200m
Derate (Amb) (W/°C)	2.0m
hfe	2.0k=
Ic Max. (A)	50m
Icbo Max. @Vcb Max. (A)	100n
Polarity	NPN
@VCE (test) (V)	10
Oper. Temp (°C) Max.	125
@Ic (A)	2.0m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.2 W
Maximum Collector-Base Voltage \|Vcb\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	15 V
Maximum Collector Current \|Ic max\|	0.05 A
Max. Operating Junction Temperature (Tj)	125 °C
Forward Current Transfer Ratio (hFE), MIN	400
SKU	345314

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